【摘要】 射频LDMOS由于具有高击穿电压、高线形、高增益、价格低廉等优势而成为手机基站中的核心射频功率放大器件,LDMOS的栅漏电容Cgd是决定截至频率的主要因素,研究他对射频LDMOS的设计具有重要的意义。通过使用二维器件模拟软件ISE,模拟并研究了射频LDMOS栅漏电容Cgd与栅源电压Vgd和漏源电压Vgs的关系;分析得到LDMOS独特电容特性的原因;得出了栅氧化层厚度、漂移区浓度、沟道区浓度参数对Cgd的影响,并验证了喙栅结构具有比普通结构更优异的射频特性。更多还原

【Abstract】 With the properties of cost effective,high breakdown voltage,high linear,high-gain,silicon power(LDMOS) have become a mainstay of microwave high-power amplifiers for wireless base station units.The gate-source capacitance affect the cut-off frequency,so research on it is very important for the design of RF-LDMOS.The relationship between gate-drain capacitance(C_gd) of RF-LDMOS with gate-source voltage(V_gs) and drain-source voltage(V_gd) is investigated with ISE.The reason of particular capacitance characteristic is analyzed.Effects of the thickness of gate oxide,implant dosages of the drift region,and the implant dosages of the channel region on C_gd are also found.At last,we prove the bird′s beak structure represent more excellent RF characteristic compared with the conventional structure.更多还原