【摘要】 本文总结了近年来Ⅲ族氮化物半导体异质结构二维电子气的研究进展。从Ⅲ族氮化物材料晶格结构和特有的极化性质出发,重点讨论了AlGaN/GaN异质结构中二维电子气的性质,总结分析了异质结构中Al组分、势垒层厚度、应变弛豫度、掺杂等对二维电子气浓度和迁移率的影响,同时还涉及AlGaN/GaN/AlGaN,AlGaN/AlN/GaN和AlGaN/InGaN/GaN等异质结构二维电子气性质。更多还原

【Abstract】 We report progress in the characteristics of two-dimensional electron gas(2DEG) in group-Ⅲ-nitride heterostructures,especially in fundamental AlGaN/GaN heterostructure.The 2DEG densities,distributions and mobility in dependence on the Al content,the thickness and strain relaxation of AlGaN barrier and doping level are discussed at length,based on the peculiar strong polarization effect in strained wurtzite GaN-based heterostructure.AlGaN/GaN/AlGaN,AlGaN/AlN/GaN, AlGaN/InGaN/GaN and other group-Ⅲ-nitride heterostructures are also briefly reviewed.更多还原