【摘要】 利用热氧化法在硅晶片上生长SiO2薄膜,结合光刻和磁控溅射技术在SiO2薄膜表面制备接触型钴掩模,通过掩模方法在硅表面开展了同步辐射光激励的表面刻蚀研究,在室温下制备了SiO2薄膜的刻蚀图样.实验结果表明:在同步辐射光照射下,通入SF6气体可以有效地对SiO2薄膜进行各向异性刻蚀,并在一定的气压范围内,刻蚀率随SF6气体浓度的增加而增加,随样品温度的下降而升高;如果在同步辐射光照射下,用SF6和O2的混合气体作为反应气体,刻蚀过程将停止在SiO2/Si界面,即不对硅刻蚀,实现了同步辐射对硅和二氧化硅两种材料的选择性刻蚀;另外,钴表现出强的抗刻蚀能力,是一种理想的同步辐射光掩模材料.更多还原

【Abstract】 The synchrotron radiation （SR） stimulated etching of SiO₂ thin film surface was investigated with a contact cobalt mask, and the etched pattern of SiO₂ thin films on silicon was made. The SiO₂ thin film was grown on silicon surface by thermal oxidation. The contact cobalt mask was fabricated on SiO₂ thin film by combining the techniques of photolithography and RF-magnetron sputtering. In the experiment, the anisotropic etching of SiO₂ was effectively achieved by SR radiation with SF₆ as the reaction gas. The etching rate increased with increasing gas pressure of SF₆ in a certain range, and with decreasing the substrate temperature. Under SR irradiation with flowing SF₆ and O₂ did not etch the silicon crystal and the etching stopped completely at the SiO₂/Si interface. Furthermore, the Co provided high resistance against the SR etching, indicating that Co is an ideal mask material for the synchrotron radiation stimulated etching.更多还原