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掺镁铌酸锂亚微米结构畴反转的研究

Research on the submicron domain inversion structure of MgO:LiNbO₃

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【Author】 Yan Wei-Guo 1)2)Chen Yun-Lin 1)2) Wang Dong-Dong 1)2)Guo Juan 1)2)Zhang Guang-Yin 1)1)(The Key Laboratory of Advanced Technique and Fabrication For Weak-Light Nonlinear Photonics Materials,Ministry of Education,College of Physics,Nankai University,Tianjin 300071,China)2)(The State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China)

【机构】南开大学物理学院教育部弱光非线性光子学材料先进技术及制备实验室；南开大学物理学院教育部弱光非线性光子学材料先进技术及制备实验室天津300071晶体材料国家重点实验室；山东大学；济南250100；天津300071晶体材料国家重点实验室；天津300071；

【摘要】研究了掺镁铌酸锂(MgO:LiNbO3)的极化特性及其畴壁运动的性质,通过调节多个脉冲外加电场来控制畴壁的运动,在背向反转效应作用下,反转畴发生劈裂,制备出均匀的掺镁铌酸锂亚微米周期畴结构,并分析探讨了掺镁铌酸锂亚微米结构的成因及其反转机理.更多还原

【Abstract】 We have investigated the periodic poling characteristics of MgO:LiNbO₃ and properties of the domain wall velocity.Based on back-switching reaction,domain-inverted velocity can be accurately controled by multi-impulse electric field,which can be used to fabricate MgO:LiNbO₃ with submicron uniform periodical structure.At the same time,we studied the cause of formation and the mechanism of submicron domain-inverted structure.更多还原