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La掺杂对Bi₄Ti₃O₁₂薄膜铁电性能的影响

Effect of La doping on ferroelectric properties of Bi₄Ti₃O₁₂ thin film

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【Author】 Guo Dong_Yun~ 1)2) Wang Yun-Bo~ 2) Yu Jun~ 2) Gao Jun-Xiong~ 2) Li Mei-Ya~ 1) 1)(Department of Physics, Wuhan University, Wuhan 430072,China)2)(Departmen of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074,China)

【机构】武汉大学物理科学与技术学院；华中科技大学电子科学与技术系；武汉大学物理科学与技术学院武汉430072；武汉430074；武汉430072；

【摘要】利用Sol-Gel法在Pt/Ti/SiO2/Si衬底上制备出Bi4Ti3O12和Bi3·25La0·75Ti3O12薄膜,研究了La掺杂对Bi4Ti3O12薄膜的晶体结构、铁电性能和疲劳特性的影响,发现La掺杂没有改变Bi4Ti3O12薄膜的基本晶体结构,并且提高了Bi4Ti3O12铁电薄膜的剩余极化值和抗疲劳性能,对La掺杂改善Bi4Ti3O12铁电薄膜性能的机理进行了讨论.更多还原

【Abstract】 The Bi₄Ti₃O12 and Bi3.25 La0.75 Ti₃O12 thin films are prepared on the Pt/Ti/SiO₂/Si substrate using sol-gel method. The structures Pt/Bi3.25 La0.75 Ti₃O12 /Pt and Pt/Bi₄Ti₃O12 /Pt are fabricated. The effects of La doping on the microstructures, and ferroelectric properties of Bi₄Ti₃O12 films are investigated. The 2Pr with test voltage 6V for the sample annealed at 700℃ increased from 12.5 μC/cm² to 18.6 μC/cm², and 2Vc is still 2.8 V when the La3+ ions occupy part of Bi3+ sites. The Bi3.25 La0.75 Ti₃O12 films showed fatigue-free behavior. The mechanism of improvement of La-doped Bi₄Ti₃O12 ferroelectric thin films is discussed.更多还原