【摘要】 基于经典热力学理论,对a-SiNx/a-Si:H/a-SiNx三明治结构或a-Si:H/a-SiNx多层膜结构中纳米硅成核,以及从球形到鼓形的生长过程进行了研究.建立了限制性晶化理论模型:在纳米硅生长过程中,由于界面能增大将导致生长停止,给出限制性晶化条件——a-Si:H子层厚度小于34nm.在激光晶化和常规热退火两种方法形成的a-SiNx/nc-Si/a-SiNx三明治结构和nc-Si/a-SiNx多层膜结构中验证了该理论模型.更多还原

【Abstract】 According to the processes of nucleation and growth of nanocrystalline silicon (nc_Si) with shape changing from sphere_like to disc_like in the a_SiN_x/a_Si:H/a_SiN_x sandwich structure or a_Si :H/a_SiN_x multilayer structure, we have proposed the theoretical model of constrained crystallinzation based on the classical thermodynamics, in which the increase of the interfacial energy between nc_Si and a_SiN_x causes the growth of nc_Si to halt, and concludes the critical thickness of a_Si sublayer (34 nm) for constrained crystallization, The model of constrained growth has been validated in a_SiN_x/nc_Si/a_SiN_x sandwich and nc_Si/a_SiN_x multilayer structures formed by laser annealing and thermal annealing.更多还原