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窄禁带稀磁半导体二维电子气的磁阻振荡研究
Magnetoresistance oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor
【摘要】 通过改变温度和磁场方向对调制掺杂的n型Hg0·82Cd0·16Mn0·02Te/Hg0·3Cd0·7Te第一类量子阱中磁性二维电子气磁阻拍频振荡进行了深入的研究,发现不仅温度的变化能够引起磁阻拍频节点位置的变化.而且改变磁场方向,可以分别调整塞曼分裂和朗道分裂.从对拍频的分析中,可以将依赖于磁场垂直方向的朗道能级分裂和依赖于整个磁场大小的塞曼分裂区分开来.
【Abstract】 This paper study the detailed magnetoresistance oscillation in Shubnikov_de Hass (SdH) of magnetic two dimensional electron gas consisting of a modulation doped n type Hg_ 0.82 Cd_ 0.16 Mn_ 0.02 Te/Hg_ 0.3 Cd_ 0.7 Te first type quantum well by changing temperature and the angle of the sample with aspect of applied magnetic field, by which found that the changing of temperature and tilt angle will cause the varying of beating node position, By analyzing beating patterns, the magnetic angle dependent Landau splitting can be separated from magnetic magnitude dependent Zeeman splitting.
【Key words】 mmgnetic two-dimensional electron gas; spin splitting; zeeman splitting; beating patterns;
- 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,2006年06期
- 【分类号】O471.1
- 【被引频次】1
- 【下载频次】145