【摘要】 用溶胶-凝胶法制备了低k多孔SiO2:F薄膜,用空间电荷限制电流法(SCLC)研究了多孔SiO2:F薄膜中的隙态密度以及掺F量对隙态密度的影响,得到了平衡费米能级附近的隙态密度约为7×1015cm-3·eV-1,以及带隙中隙态随能量的分布.并对造成隙态的主要原因也进行了讨论.更多还原

【Abstract】 The porous fluorine doped silica （SiO₂:F） films were prepared by sol-gel method. The densities of the states （DOS） of the SiO₂:F films and the effect of the dose of the F dopant were studied by space charge limited current（SCLC） techniques. Distribution of defect states N（E） in the vicinity of Fermi level in SiO₂:F films was determined to be about 7×10 15 cm^-3 ·eV^-1 . The dangling bounds on the surface of the porous film were the primary cause of the DOS.更多还原