【摘要】 研究了双子带占据的In_0·52Al_0·48As/In_0·53Ga_0·47As单量子阱中磁电阻的Shubnikov-de Haas（SdH）振荡效应和霍耳效应,获得了不同子带电子的浓度、迁移率、有效质量和能级位置.低磁感应强度（B<1·5T）下由迁移率谱和多载流子拟合相结合的方法得到的各子带电子浓度与通过SdH振荡得到的结果一致.在d2ρ/dB2-1/B的快速傅里叶变换谱中,观察到除了通常强烈依赖温度的对应于各子带的频率f1和f2以及f1的倍频（2f1）外,还观察到对温度不敏感的频率f1-f2.这是由于量子阱中不同子带的电子具有相近的有效质量,两个子带之间发生了强烈的磁致子带间散射.更多还原

【Abstract】 Magneto-transport measurements have been carried out on a Si heavily δ-doped In_0·52Al_0·48As/In_0·53Ga_0·47As single quantum well in the temperature range between 1.5 and 60?K under magnetic field up to 10?T. We studied the Shubnikov-de Haas（SdH） effect and the Hall effect for the In- 0.52 Al- 0.48 As/In- 0.53 Ga- 0.47 As single quantum well occupied by two subbands,and have obtained the electron concentration, mobility, effective mass and energy levels respectively. The electron concentrations of the two subbands derived from mobility spectrum combined with multi-carrier fitting analysis are well consistent with the result from the SdH oscillation. From fast Fourier transform analysis for d²ρ/dB²-1/B,it is observed that there is a frequency of f-1-f-2 insensitive to the temperature, besides the frequencies f-1, f-2 for the two subbands and the frequency doubling 2f-1, both dependent on the temperature. This is because that the electrons occupying the two different subbands almost have the same effective mass in the quantum well and the magneto-intersubband scattering between the two subbands is strong.更多还原