【摘要】 利用深能级瞬态谱(DLTS)、傅里叶变换红外光谱(FT-IR)对GaN以及GaN掺Er/Pr的样品进行了电学和光学特性分析.研究发现未掺杂的GaN样品只在导带下0·270eV处有一个深能级;GaN注入Er经900℃,30min退火后的样品出现了四个深能级,能级位置位于导带下0·300eV,0·188eV,0·600eV和0·410eV;GaN注入Pr经1050℃,30min退火后的样品同样出现了四个深能级,能级位置位于导带下0·280eV,0·190eV,0·610eV和0·390eV;对每一个深能级的来源进行了讨论.光谱研究表明,掺Er的GaN样品经900℃,30min退火后,可以观察到Er的1538nm处的发光,而且对能量输运和发光过程进行了讨论.更多还原

【Abstract】 Deep level transient spectroscopy measurements were used to characterize the electrical properties of metal organic chemical vapor deposition grown undoped, Er-implanted and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300 eV, 0.188 eV, 0.600 eV and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 ℃ for 30 min, and four defect levels located at 0.280 eV, 0.190 eV, 0.610 eV and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 ℃ for 30min. The origins of the deep defect levels are discussed. After annealing at 900℃ for 30min in a nitrogen flow, Er-related 1538nm luminescence peaks could be observed for the Er-implanted GaN sample. The energy-transfer and luminescence mechanism of the Er-implanted GaN film are described.更多还原