【摘要】 本文设计了一个基于数字CMOS工艺的以有源电感为负载的宽带低噪声放大器,其中包括了级联型有源电感的优化设计。电路采用共栅结构,用HSPICE进行仿真优化,模拟结果表明电路工作良好,S21达到10dB,电压增益为17dB,满足增益要求;在3dB带宽内,S11在-12￣-17dB之间,完全符合一般通信系统S11<-10dB的要求;NF在3.6至4.9之间。通带的反向隔离良好,大于40dB,S22亦在-14dB以下。更多还原

【Abstract】 A broadband low noise amplifier (LNA) with an unbalanced active inductor load using digital CMOS technology is present-ed. The optimal design of this unbalanced active inductor for specific cases is also discussed. A common gate structure is employed to improve the broadband performance. HSPICE simulation is performed for the designed LNA. It is shown that this LNA has (i) a power gain of 10 dB (S21) and a voltage gain of 17 dB, which are quite sufficient for a practical LNA, (ii) S11 between -12￣-17 dB in the 3 dB bandwidth, which meets the below -10dB requirement for the most communication systems, (iii) S12 less than -40 dB, which ensures a good isolation,(iv) S22 below -14 dB, and (v) a noise figure (NF) between 3.6￣4.9 dB, which is quite good for a broadband LNA. The power consumption is 20mW.更多还原