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氮分压对离子束溅射镍铬合金薄膜的影响

Influence of Nitrogen Partial Pressure on NiCr Thin Films Prepared by Ion Beam Sputtering

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【作者】 田莉周继承晏建武

【Author】 TIAN Li~(1,2),ZHOU Ji-cheng~1,YAN Jian-wu~1(1.School of Physics Science and Technology,Central South University,Changsha 410083,China;2.School of Physics Science and Technology,Hunan University of Science and Technology,Xiangtan 411201,China)

【机构】 中南大学物理科学与技术学院中南大学物理科学与技术学院 长沙410083湖南科技大学物理学院湘潭411201长沙410083

【摘要】 研究了氮气分压对薄膜沉积速率、表面形貌、电阻温度系数(TCR)以及电阻率的影响。利用原子力显微镜表征了薄膜的表面形貌,用Alpha-Step IQ台阶仪和四探针测量了薄膜的厚度和方块电阻。结果表明:薄膜沉积速率随氮气分压增大而减小;热处理使薄膜颗粒尺寸均匀,电阻率减小,电阻迟滞减小且TCR由负值变为正值。

【Abstract】 The nitrogen partial pressure dependence of deposition rate,surface morphology,TCR and resistivity is studied in this article.The films were characterized by AFM to study surface morphology.The film’s thickness and sheet resistance were measured by Alpha-Step IQ Profilers and four-point probe.The experimental results showed that for as-deposited film,deposition rate decreased with increasing partial pressure;heat-treatment made the average grain size and the total resistance reduction decreased.After annealing,the resistivity of films decreased and TCR turn into positive value.

【关键词】 NiCr薄膜表面形貌电阻率TCR
【Key words】 NiCr thin filmssurface morphologyresistivityTCR
【基金】 国家自然科学基金(60371046)
  • 【文献出处】 武汉理工大学学报 ,Journal of Wuhan University of Technology , 编辑部邮箱 ,2006年10期
  • 【分类号】TG174.4;TB43
  • 【下载频次】134
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