【摘要】 通过对TiN/SiC、TiN/TiB₂和TiN/SiO₂纳米多层膜微结构和力学性能的研究,展示了通常溅射沉积态为非晶的SiC、TiB₂和SiO₂薄膜,在立方结构的TiN晶体层模板作用下的晶化现象,以及多层膜由此产生的生长结构和力学性能的变化．结果表明：SiC在层厚≤0．6nm时晶化为立方结构后,可以反过来促进TiN/SiC多层膜中TiN层的晶体完整性；TiB₂在层厚≤2．9nm时晶化为六方结构,并与TiN形成{111}TiN//{0001}TiB₂,<100>TiN//<11（?）0>TiB₂的共格关系；SiO₂在层厚≤0．9nm时晶化为立方结构的赝晶．多层膜中SiC、TiB₂和SiO₂品化后都与TiN形成共格外延的生长结构,并相应产生了硬度升高的超硬效应．随着SiC、TiB₂和SiO₂层厚的增加,它们又转变为非晶态,多层膜的共格外延生长受到破坏,其硬度亦明显降低．更多还原

【Abstract】 Template-induced epitaxial crystallization of SiC,TiB₂ and SiO₂ in TiN/SiC,TiN/TiB₂ and TiN/SiO₂ nano-multilayer films and its influence on mechanical properties of the correspond- ing films were investigated.Results reveal that amorphous SiC,TiB₂ and SiO₂,which are more favorable under sputtering conditions,crystallize at smaller layer thicknesses due to the template effect of c-TiN layers.In particular,SiC crystallizes out in the face-centered cubic structure when its thickness is less than 0.6nm,which improves the crystal quality and structural integrity of the films;While TiB₂,with thickness less than 2.9nm,forms hcp structure.The epitaxial orientation relationship between TiN and TiB₂ is {111}TiN//{0001}TiB₂,〈100〉TiN //〈11（?）0〉TiB₂;SiO₂, different from the above two,forms fcc pseudo-crystalline structure under a thickness of 0.9nm. With the crystallization of SiC,TiB₂ and SiO₂,hardness anomalous enhancement,i.e.superhard- hess effect,appears in those films.This phenomenon of hardness enhancement disappears rapidly when further increase the thickness of SiC,TiB₂ and SiO₂ layers,and at the same time,crystallines of SiC,TiB₂ and SiO₂ transform into their amorphous forms,respectively.The formation of these relatively soft amorphous layers,which blocks the coherent growth of the multilayer films,is the main reason of hardness decline at large SiC,TiB₂ and SiO₂ layer thicknesses.更多还原