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飞秒脉冲激光沉积Si基α轴择优取向的钛酸铋铁电薄膜及Ⅰ-Ⅴ特性研究
α-axis Oriented Bi4Ti3O12 Thin Films Deposited on Si（111） by Femtosecond Laser Ablation and Its Characteristic ofⅠ-ⅤCurve
【摘要】 采用飞秒脉冲激光沉积系统,在Si(111)衬底上制备了a轴和c轴择优取向的Bi4Ti3O12薄膜．X射线衍射(XRD)表明:室温(20℃)下沉积的Bi4Ti3O12／Si(111)薄膜呈c轴择优取向,晶粒的平均直径为20nm．在500℃沉积的Bi4Ti3O12／Si(111)薄膜呈a轴择优取向．测量了薄膜的电滞回线和Ⅰ-Ⅴ特性曲线,并用分布参数电路研究了Bi4Ti3O12薄膜的,Ⅰ-Ⅴ特性曲线和铁电性的关联性．a轴择优取向Bi4Ti3O12薄膜的剩余极化强度Pr=15μC／cm2,矫顽力Ec=48kV／cm．
【Abstract】 The polycrystalline Bi4Ti3O12 thin films were successfully prepared by femtosecond laser deposition on Si(111) wafers. X-ray diffraction (XRD) showed that Bi4Ti3O12 thin film was highly c-axis-oriented deposited at room temperature (20℃), but the film was highlyα-axisoriented deposited at 500℃. The remanent polarization (Pr) and coercive force (Ec) ofα-axisoriented samples were measured to be 15μC/cm2 and 48kV/cm respectiovely. An equivalent circuit with distributed constants of Bi4Ti3O12/Si was introduced to interpret the relationship between theⅠ-Ⅴcharacteristic curve and the ferroelectric hysteresis loop of Bi4Ti3O12 deposited on Si.
【Key words】 femtosecond； pulsed laser deposition； Bi4Ti3O12； ferroelectric thin film；
- 【文献出处】 无机材料学报 ,Journal of Inorganic Materials , 编辑部邮箱 ,2006年05期
- 【分类号】O484.4
- 【被引频次】5
- 【下载频次】140