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ZnO陶瓷靶制备及其薄膜RF溅射工艺研究

Li-doped ZnO Ceramic Target Preparation and RF Magnetron Sputtering ZnO Films

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【作者】 陈祝张树人杜善义杨成韬郑泽渔李波孙明霞

【Author】 CHEN Zhu, ZHANG Shu-Ren, DU Shan-Yi, YANG Cheng-Tao, ZENG Ze-Yu, LI Bo, SUN Ming-Xia ( Department of Telecommunication Engineering, Chengdu University of Information Technology, Chengdu 610225, China; School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China; Center for Composite Materials. Harbin Institute of Technology, Harbin 150001, China)

【机构】 成都信息工程学院通信工程系电子科技大学微电子与固体电子学院哈尔滨工业大学复合材料研究所电子科技大学微电子与固体电子学院 成都 610225 电子科技大学微电子与固体电子学院成都 610054哈尔滨 150001

【摘要】 利用固相反应制备了直径为70mm,厚度为10-15mm高质量掺杂Li2CO2的ZnO陶瓷靶材,实验了不同摩尔浓度的Li+掺杂对靶材性能的影响,确定了最佳Li+掺杂量为2.2mol%,同时通过在不同温度烧结实验、不同成型压力实验确定了ZnO靶材制备的最佳工艺,并采用所制备的ZnO-Li2.2%陶瓷靶和RF(射频磁控)技术在Si(100)、玻璃(载玻片)、及Pt(111)/Ti/SiO2/Si(100)基片上制备出高度c轴(002)择优取向的ZnO薄膜,其绝缘电阻率ρ为4.12×108Ω·cm,达到了声表面波器件(SAW)的使用要求.

【Abstract】 We successfully prepared high quality Li-doped ZnO ceramic targets with 70mm in diameter and 10~15mm in depth by solid-state reactions. The paper studied the influence of different concentration of Li2CO3 on the electrical properties of ZnO ceramic target. By comparing and analyzing the IR( insulative resistivity ) and tgδ(dielectric loss), the optimum concentration of Li2CO3 doped in ZnO ceramic target was obtained(2.2%mol ratio). And the optimum process for preparing ZnO-Li22% ceramic target was also realized through the investigation of physics and electrics of ZnO ceramic under the different sintering temperatures and molding pressure treatments. By using Li22%-doped ZnO ceramic as the target, the ZnO films with highly c-axis (002) preferred orientation were grown by RF magnetron sputtering on Si(100), glass and Pt(111)/Ti/SiO2/Si(100) substrates respectively.

  • 【文献出处】 无机材料学报 ,Journal of Inorganic Materials , 编辑部邮箱 ,2006年04期
  • 【分类号】TQ174.1
  • 【被引频次】9
  • 【下载频次】407
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