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纳米Cu2O/TiO2异质结薄膜电极的制备和表征
Preparation and Characterization of Nanocrystalline Cu2O/TiO2 Heterojunction Film Electrode
【摘要】 通过阴极还原在纳米TiO2膜上电沉积Cu2O,获得了p-Cu2O/n-TiO2异质结电极.研究了沉积温度对Cu2O膜厚、纯度和形貌的影响,制备出纯度较高、粒径为40-50nm的Cu2O 薄膜.纳米Cu2O膜在200℃烧结后透光性最好,禁带宽度为2.06eV.光电化学测试表明纳米 p-Cu2O/n-TiO2异质结电极呈现较强的n-型光电流响应并且能够提高光电转换效率.
【Abstract】 This paper introduced the electrochemical deposition of Cu2O thin films on TiO2 films by cathodic reduction to form p-Cu2O/n-TiO2 heterostructure electrode. The effects of bath temperature on film thickness, purity and morphology of Cu2O films were studied. Pure spherically shaped Cu2O grains with 40-50nm diameter were obtained. It is found that annealing at 200℃ can improve the spectral transmittance of the Cu2O film and the film has a band gap of 2.06eV. The measurements of photoelectrochemical behavior of the nanocrystalline p-Cu2O/n-TiO2 heterostructure electrode show that such heterostructure electrode produces strong n-type spectral response and can improve the photoelectron conversion efficiency.
【Key words】 cuprous oxide thin film; TiO2 film; heterojunction electrode; photoelectrochemistry;
- 【文献出处】 无机材料学报 ,Journal of Inorganic Materials , 编辑部邮箱 ,2006年02期
- 【分类号】O646.5
- 【被引频次】42
- 【下载频次】1208