【摘要】 为了降低a-Si:H薄膜中的氢含量,提高其稳定性,在我们MWECR-CVD系统中引入了热丝装置,热丝对等离子体的热辐射使等离子体升温,既促进了气体的进一步分解和电离,获得较多的低氢原子基团,也减少了活性高硅烷聚合物的生成,从而使薄膜中的(SiH2)n的含量降低。同时,热丝对样品表面提供的热辐射和光辐射也可以进一步降低薄膜的氢含量。实验结果表明,用这种装置沉积的a-Si:H薄膜,氢含量可降低到4.5at%左右,稳定性明显增强,光敏性也有一定改善。更多还原

【Abstract】 A novel MWECR-CVD system with hot wire assisted has been developed to decreased the hydrogen concentration of a-Si:H films and increased the stability.The main role of the hot wire is to increase the plasma temperature.promote the decomposition of reaction gas thereby to increase the low-hydrogen radicals and restrain the higher silicon reactive species which are critical to form(SiH2)n.The radiation from the hot wire also increases the temperature of growing surface of the films,which strengthens the activation of the surface and enhances the diffusion of hydrogen atoms,so that the hydrogen concentration is decreased and the microstructure of the a-Si:H films can be improved.The experiment results show that the hydrogen concentration of a-Si:H films by using this system can be reduced to about 4.5at%,and meanwhile,the stability is increased remarkably and the photosensitivity is improved.更多还原