【摘要】 采用快速热化学气相沉积(RTCVD)法在Si-SiC陶瓷衬底上直接沉积多晶硅薄膜的研究,属国内首次。采用SEM和XRD两种测试方法分析了沉积外延的表面形貌和薄膜晶向,实验发现在RTCVD工艺中生长的多晶硅薄膜结构致密、晶粒较大,为制备低成本的陶瓷衬底多晶硅薄膜太阳电池奠定了基础。更多还原

【Abstract】 Two type of Si-SiC complex ceramic substrates with good thermodynamic and crystal match with polycrystalline silicon thin film were prepared in our experiment.The substrates were defined as typeⅠand typeⅡaccording to higher and lower process temperature,respectively.The polycrystalline silicon thin-films were fabricated by means of rapid ther- mal CVD（RTCVD）on the substrates above 1100℃using SiH₂Cl₂ and B₂H₆ as the source gas.The orientation is mea- sured by XRD,and SEM analyzes the pattern.The grain size of the thin film on substrates made on high larger than one on substrafeⅡ.All analysis show that the SiSiC substrates made on high temperature process are suitable for fabricating the polycrystalline silicon thin film.更多还原