【摘要】 采用快速热化学气相沉积方法在氧化铝和氮化铝陶瓷衬底上制备多晶硅薄膜及太阳电池。多晶硅薄膜的晶粒尺寸在经过区再结晶后增大且霍尔迁移率提高,但随后的薄膜生长发现薄膜出现裂纹,影响了电池的效率,在Al₂O₃衬底上得到196mV开路电压,1．93mA短路电流；在AIN衬底上得到310mV开路电压,5．31mA短路电流。更多还原

【Abstract】 Polysrystalline silicon thin film was deposited on Al₂O₃ and A1N ceramic substrates by RTCVD process.The ZMR（Zone Melting Recrystallinezation）process was used without any intermediated layer and overlay.The maximum grain size of the active silicon thin film is about one millimeter in width and a few millimeters in length after ZMR.The emitter layer was formed by means of a thermal diffusion process.Both n⁺ electrode in the center,and p⁺ electrode on the edge were fabricated entirely on the front side.TheⅤ_oc of solar cells based on Al₂O₃ and on AIN are 196mV and 310mV;Ⅰ_ac of solar cells based on Al₂O₃ and on AIN are 1.93mA and 5.3mA,respectively.更多还原