【摘要】 文章由等离子体双极漂移方程和临界预充电荷条件出发,得出高速大功率半导体开关RSD的di/dt耐量表达式。从外电路和器件结构本身两方面分析了RSD的di/dt耐量的影响因素,并提出了改善di/dt耐量的措施,测试结果证明了理论分析的正确性。更多还原

【Abstract】 We get the expression of di/dt bearing of pulsed power semiconductor switch RSD which is based on equation of plasma bipolar drift and the critical condition of stored charge.We analyzed the influence factors of di/dt bearing of RSD from two aspects of outer circuit and devices’ own structure.Some measures which can improve di/dt bearing have been proposed.The testing results proved the theoretical analysis.更多还原