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四氧化三铁薄膜的电子输运性能

Electron transportation properties of Fe₃O₄ film

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【Author】 WANG Jian~1,WANG Ya-xin~2,LIU Ji-wen~1,LIU Hui~2(1.School of Material Science and Engineering,Tianjin University of Technology,Tianjin 300191,China;2.School of Informatics,Nankai University,Tianjin 300071,China)

【机构】天津理工大学材料科学与工程学院；南开大学信息学院；南开大学信息学院天津300191；天津300071；天津300191；

【摘要】四氧化三铁薄膜以其100%的自旋极化率、高居里温度及巨磁电阻效应等优异的自旋相关的电子输运性能,成为磁随机存储器、磁记录读出磁头和磁传感器等自旋电子学器件的重要材料.本文从电阻率、磁电阻效应、霍尔效应三方面综合阐述了四氧化三铁薄膜电子输运性能的发展及现状,并展望了其在磁记录方面的应用前景.更多还原

【Abstract】 Fe₃O₄ film was considered to be an important material because of its 100% electron polar-ization at the fermi energy,highest known curie temperature and giant magnetoresistance.So it has become a pre-ferred material as magnetic random access memory（MRAM）,magnetic head,and ma-gnetic sensor.In this paper,we expatiation the electron transportation properties of Fe₃O₄ film of its resistivity,magnetoresistance effect and Hall effect.At last we propose the prospectation of Fe₃O₄ film in magnetic access memory.更多还原