【摘要】 反熔丝器件广泛地应用在FPGA、DRAM、PROM、EPROM芯片中.介绍了多晶硅/ONO(氧化层-氮化物-氧化层)/多晶硅结构的反熔丝.描述了半导体技术制造反熔丝的工艺流程和工艺条件.未编程的反熔丝表现为电容特性,电阻即off-state电阻较大;经高电压编程的反熔丝即on-state电阻阻值较低.高压编程过的反熔丝的上下导电层短路(阻值在几十欧姆范围内),形成电流通路.研究中采用生长氧化层-氮化-生长氧化层的方法形成ONO结构.试验数据表明:ONO结构反熔丝介质漏电低于1×10-14A,稳定性高,在较大温度范围内on-state电阻变化小.反熔丝编程电压在15 V以下.更多还原

【Abstract】 Anti-fuse is widely used in FPGA,DRAM,PROM,EPROM chips.This paper introduces the anti-fuse structure of Poly-silicon/ONO/Poly-silicon layers and gives the process of semiconductor（fabrication）.Nonprogrammed anti-fuse operates like capacitor,off-state resistance is higher,but（programmed）,on-state resistance is lower.Anti-fuse programmed by high voltage can form current path by causing a short in upper and lower electric layers.The ONO structure was obtained by developing SiO₂-Si₃N₄-SiO₂ in the experiment.The experiment dada show that the leakage of ONO anti-fuse medium is smaller than 1×10^-14?A,stability is high,changing amount of on-state resistance is very small over a wide temperature range,and anti-fuse programming voltage is smaller than 15?V.更多还原