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PROM器件中Ni-Cr熔丝的设计

Design of Ni-Cr fuse used in PROM devices

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【作者】 孙承松张丽娟陈桂梅袁凯

【Author】 SUN Cheng-song~1,ZHANG Li-juan~1,CHEN Gui-mei~2,YUAN Kai~2 (1.School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110023,China;(2.Northeast)Microelectronics Institute,Shenyang 110032,China)

【机构】 沈阳工业大学信息科学与工程学院东北微电子研究所东北微电子研究所 沈阳110023沈阳110023沈阳110032

【摘要】 介绍了应用在PROM器件中的Ni-Cr熔丝电阻的设计.熔丝是决定PROM器件稳定性的关键元件.Ni-Cr薄膜材料有良好的半导体加工特性和温度稳定性.通过热学分析和测试实验,得到相关数据,设计出熔丝形状以及三维尺寸.再根据此集成电路器件的整体版图布局设计出可应用到PROM中的Ni-Cr熔丝.采用磁控溅射方法,通过控制工艺条件得到所需的薄膜厚度,经光刻形成所需图形.通过产品的读取测试实验,取得了良好的效果.

【Abstract】 The design of Ni-Cr fuse resistor used in PROM Deviceis introduced.The fuse is a(crucial factor) affecting the stability of PROM devises.Ni-Cr thin film has excellent characteristics of(semiconductor) (process) and good temperature stability.Through calorifics analysis and experiments,relevant useful data can be obtained,fuse’s shape and its three-dimension size can be designed.The Ni-Cr fuse must designed match with the whole layout design of PROM.Magnet-controlled sputtering approach was(adopted) to(obtain) thin film with the suitable thickness,and then,the graph of design is formed by photo etching.The expectant results are gained with the read operations.

【关键词】 Ni-Cr电阻熔丝可编程只读存储器集成电路设计
【Key words】 Ni-Cr resistorfusePROMICdesign
  • 【文献出处】 沈阳工业大学学报 ,Journal of Shenyang University of Technology , 编辑部邮箱 ,2006年03期
  • 【分类号】TM563
  • 【下载频次】61
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