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Na-Mg弱掺杂ZnO薄膜的结构和电学特性
Structure and Electrical Characteristics of ZnO Thin Films Doped with Na-Mg
【摘要】 报道了用溶胶凝胶法制备由Na、Mg两种元素共同掺杂的ZnO薄膜,研究了在Na-Mg共同掺杂情况下,ZnO薄膜的表面形貌、微结构和电学性质.通过改变Na、Mg掺杂量与Zn的比值,ZnO薄膜可呈现良好的c-轴取向.同时,经过Hall效应测量发现:ZnO薄膜的电阻率、载流子浓度和迁移率随着Na、Mg的掺杂量而变化,并出现离散性,薄膜电阻率最低可达0.57×105Ω.cm,具有P-型传导性.
【Abstract】 In this paper,the Na-Mg co-doping effect of P-type zinc oxide(ZnO) thin film made by sol-gel technique is investigated.The surface morphology,microstructure and electrical property are examined by scanning electron microscope(SEM),X-ray diffraction(XRD) and Hall effect measurement,respectively.The results show that the ZnO film growth is along the c-axis of the ZnO crystal and the resistivity is obviously influenced by the amount of doping.The minimum resistivity of the ZnO film is confirmed to be 0.57×10~5(Ω·cm.)
【Key words】 sol-gel technique; Na-Mg co-dopants; ZnO film; resistivity measurement;
- 【文献出处】 上海大学学报(自然科学版) ,Journal of Shanghai University(Natural Science Edition) , 编辑部邮箱 ,2006年06期
- 【分类号】O484
- 【被引频次】7
- 【下载频次】285