【摘要】 采用真空蒸发-真空退火工艺由V2O5粉末制备VO2薄膜,研究了退火温度对薄膜的影响.经XRD,XPS及电阻-温度测试发现,随退火温度的升高,VO2薄膜先后经历了单斜晶系VO2(B)型→单斜晶系VO2(A)型→四方晶系VO2的变化,在3种类型的薄膜中V均以V4+为主,且在VO2(A)型薄膜中V4+含量最高.薄膜电阻以退火温度460℃时为分界线,低于460℃时,VO2(B)型薄膜电阻和电阻温度系数随退火温度的升高而增大;高于460℃时,四方晶系VO2薄膜的电阻及其电阻温度系数随退火温度的升高呈现相反的趋势.更多还原

【Abstract】 The VO₂thin films are prepared from V₂O₅powder by vacuum evaporation and vacuum annealing.The effects of different annealingtemperature on the thin films are studied by use of X-ray diffraction（XRD）,X-ray photoelectron spectroscopy（XPS） and resistance-temperature testings.The result shows that the state of VO₂ thin films experiences Monolinic VO₂（B）→Monolinic VO₂（A）→Tetragonal VO₂when the annealing temperature elevates.The percentages of V⁴⁺are large in all three types of thin films and the largest is in the VO₂（A） thin films.The electric property of thin films divides at 460℃:below 460℃ the resistance and the temperature coefficient of resistance of the VO₂（B） thin films increase with the increase of annealing temperature,and above 460℃,the VO₂thin films present the contrary tendency.更多还原