【摘要】 采用相同温度、刚玉粉、抛光时间和不同方式配制成抛光液,对4组CdSe晶片进行抛光。研究结果表明,采用化学机械抛光能较大地提高晶片的抛光质量。通过用不同pH值的抛光液对CdSe晶片进行抛光,发现用NaOH将抛光液pH值调整为8的一组CdSe晶片,获得了最好的抛光效果,电阻率较高,达到3.2×108Ω.cm以上,适合CdSe探测器制备。更多还原

【Abstract】 Under the same experimental condition(same polishing time,temperature and sapphire concentration),four groups of CdSe wafers were polished using four different polishing solutions.The experimental results indicated that polishing quality was greatly enhanced by using chemical mechanical polishing(CMP) technology.Having been polished by using four different slurries,it is found that the group of wafers polished by the slurry whose pH value was modified to 8 by using NaOH achieved best polishing performance and highest electrical resistivity(3.2×10~8Ω·cm).The wafers are suitable to manufacture CdSe detectors.更多还原