【摘要】 报道了CdZnTe探测器晶片表面钝化工艺对其性能的影响。先采用金相砂纸和化学腐蚀剂对CdZnTe晶片进行机械和化学抛光,然后分别用H2O2溶液和NH4F/H2O2溶液对晶片进行湿法钝化;再用ZC 36微电流测试仪和扫描电镜测试研究了不同钝化时间对CdZnTe晶片电学性质和表面形态的影响。结果发现:用NH4F/H2O2溶液对CdZnTe探测器晶片进行钝化30m in,晶片表面形成一层完整的高阻氧化层,表面漏电流最小、晶体电阻率提高1~2个数量级,达到109~10Ω.cm,适合探测器的制备。更多还原

【Abstract】 The influences of surface passivation process on the properties of the wafers for CdZnTe（CZT） detector were reported.Firstly,the CZT wafers were polished mechanically and chemically by means of metallographic abrasive papers and chemical etchant.Then the wafers were passivated respectively by H₂O₂ solution and NH₄F/H₂O₂ solution.By using micro-current test instrument and scanning electron microscopy（SEM）,the influences of different passivation time on the electronic properties of the wafers were studied.It was found that when CZT wafers were passivated 30 minutes with NH₄F/H₂O₂ solution,there formed a high resistivity layer of oxide on the surface.The leakage current of the surface is the lowest,resistivity of the crystal heightened for 1-2 order of magnitude,up to 10^9-10Ω·cm.The wafers can be used for the preparation of CZT detectors.更多还原