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掺三氟乙酸TGS晶体生长及其性能研究

Study on Growth and Properties of Trifluoroacetic Acid Doped TGS Crystals

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【作者】 常新安艾琳臧和贵肖卫强涂衡

【Author】 CHANG Xin-an,AI Lin,ZANG He-gui,XIAO Wei-qiang,TU Heng(College of Materials Science and Engineering,Beijing University of Technology, Beijing 100022,China)

【机构】 北京工业大学材料科学与工程学院北京工业大学材料科学与工程学院 北京100022北京100022

【摘要】 本文以三氟乙酸作为掺质,分别按4.4mol%、9.4mol%、13.4mol%、18.4mol%的配比进行了掺质TGS晶体生长,并对其作X射线粉末衍射分析及晶体热释电性能的测试。结果表明,三氟乙酸的掺入虽然使热释电性能有一定程度下降,但却使得晶体铁电-顺电相转变延迟,提高了晶体的居里点,并产生了一定的内偏压场。

【Abstract】 Trifluoroacetic acid doped TGS crystals were grown from the aqueous solution with different dopant concentrations by slow-cooling method.The X-ray powder diffraction and the main pyroelectric parameters of the crystals were measured.The results show that the transition between the ferroelectric phase and the paraelectric phase is postponed,the Curie point of TFTGS single crystals is improved and inner bias voltage field is produced by doping trifluoroacetic acid although the pyroelectric properties of the crystals may be decreased to some degree.

  • 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2006年03期
  • 【分类号】O782
  • 【被引频次】3
  • 【下载频次】89
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