【摘要】 采用直流电沉积方法,在石墨板上成功制备了半导体二氧化钛功能薄膜前驱体,分析讨论了电沉积过程中实验参数对TiO2前驱体成膜的影响,获得了制备二氧化钛膜最佳工艺参数。TiO2前驱体沉积速率随着电流密度的增大而增加,为了保证薄膜质量,将电流密度控制在5~45mA/cm2之间;溶液浓度对沉积速率也有影响,当溶液中TiC l4:H2O2=1:2时沉积速率最大;最佳沉积温度为5-10℃。运用差热分析、XRD相结构分析和SEM等手段,研究了该前驱体到锐钛矿相(anatase)和金红石相(rutile)二氧化钛的组织相转变过程,300℃热处理得到锐钛矿相的二氧化钛,650℃热处理后出现金红石相。更多还原

【Abstract】 The precursor of functional semiconductor TiO₂ film was successfully deposited by DC electrodepostion on the graphic substrate.The effects of the main experimental parameters on formation of the deposited film were discussed,and the optimal parameters were determined for TiO₂ precursor deposited film.The deposited rate of TiO₂ precusor increased with increase of the current density,which was controlled at the range from 5 to 45 mA/cm² in order to obtain a high quality film.The solution concentration affected the film deposited rate,which attained to the maximum while TiCl₄:H₂O₂=1:2 in the solution.The optimal deposited temperature was selected at 5-10℃.The transformation of the precursor from anatase to rutile was characterized by DSC,XRD and SEM,etc.The TiO₂ with an anatase phase structure formed after heat treatment at 300℃,and a rutile phase generated as the temperature increased to 650℃.更多还原