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快速退火对PZT铁电薄膜结构的影响
Influence of Rapid Thermal Process on Structure of PZT Ferroelectric Thin Film
【摘要】 采用射频磁控溅射方法在Pt/Ti/S iO2/S i衬底上制备出(PZT)铁电薄膜,在550℃、600℃、650℃、700℃几个温度下对薄膜进行了快速退火热处理,并在退火处理后用X射线衍射、原子力显微镜和热释电系数测试系统研究了PZT铁电薄膜的薄膜结构、表面形貌及热释电性能。在650℃快速退火后,PZT铁电薄膜已经形成较好的钙钛矿相结构,并获得了较好的热释电性能,热释电系数达到1.5×10-8C.cm-2.k-1。
【Abstract】 Lead zirconate titanate(PZT) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by RF magnetron sputtering.Membrane structure and morphology of the PZT ferroelectric thin films were investigated by X-ray diffraction(XRD)and atomic force microscopy(AFM) after annealed at 550℃,600℃,650℃ and 700℃ by rapid thermal process(RTP).The pyroelectric coefficients were measured by a patented technique.The PZT thin film showed a pure perovskite structure and a good pyroelectric property after annealed at 650℃.The pyroelectric coefficient of the thin film is 1.5×10-8(C·cm-2·k-1.)
- 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2006年02期
- 【分类号】O484
- 【被引频次】6
- 【下载频次】364