节点文献
低位错ZnSe单晶的生长
Growth of ZnSe Single Crystal with Low Dislocations
【摘要】 采用化学气相输运法(CVT)在适合的温度和I2含量的条件下,生长出了25mm×3mm的ZnSe单晶,位错密度为6.5×103个/cm2。对ZnSe单晶进行光学性能分析,在10.6μm处的透过率超过70%,在10.6μm处的吸收系数为7.72×10-4/cm。
【Abstract】 A ZnSe single crystal with diameter of 25mm and length of 3mm was grown at a correct temperature and with I2.Its dislocation density is 4.4×104cm-2.The optical property analysis shows that the ZnSe single crystal possesses transmittance above 70% and absorption coefficient 7.72×10-4/cm at 10.6μm.
【关键词】 ZnSe单晶;
化学气相输运;
位错密度;
【Key words】 ZnSe single crystal; chemical vapor transportation; dislocation density;
【Key words】 ZnSe single crystal; chemical vapor transportation; dislocation density;
【基金】 国家863计划(No.2002AA325030)资助项目
- 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2006年02期
- 【分类号】O782
- 【被引频次】6
- 【下载频次】149