【摘要】 利用双靶磁控溅射法,在普通石英玻璃基底上成功制备出II-VI族化合物固溶体半导体Zn1-xMgxS多晶薄膜,并用X射线能量色散谱仪(EDS)、原子力显微镜(AFM)、X射线衍射仪(XRD)、紫外-可见(UV-V is)分光光度计、荧光分光光度计(PL)等测试手段表征了多晶薄膜的成份、表面形貌、晶体结构和光学性质。结果表明:磁控溅射法制备的Zn1-xMgxS多晶薄膜具有立方和六方相混晶相结构,晶粒生长均匀,薄膜在波长小于280nm的紫外区有强烈的吸收,在可见光区紫光范围有一个强的发光峰,而且随着Mg含量的增加,强度增加,吸收边和发光峰的蓝移也增加。蓝移说明了带隙的展宽,其禁带宽度大约从3.6 eV增至4.4 eV。较高的结晶质量和发光特性显示了它是一种制作短波光电器件和紫外探测器的理想材料。更多还原

【Abstract】 Polycrystalline Zn_1-xMg_xS thin films for Ⅱ-Ⅵ compound solid-solution semiconductor were successfully prepared on the quartz glass substrates by magnetron sputtering with two targets.The compositions,structures,morphologies and optical characterizations of the films were investigated by EDS,AFM,XRD,UV-visible absorption spectra and PL spectra.The results show that a cubic and hexagonal mixed phase crystal could be formed when x is from 0.33 to 0.75.The film has a very strong absorption in the short wavelength range and a violet light emission peak at room temperature.The intensity of the light emission peaks increase with increase of the Mg content of the films.The blue shifts of the absorption edge and the light emission peak also increase.The blue shifts indicate that the band-gap of the film increases from 3.6eV to 4.4eV.It is concluded that Zn_1-xMg_xS thin films are promising materials for short wavelength optoelectronic applications and ultraviolet detectors.更多还原