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晶体生长机制和生长动力学的蒙特卡罗模拟研究
Monte Carlo Simulation Study on Crystal Growth Mechanism and Kinetics
【摘要】 采用动力学蒙特卡罗方法,对在完整光滑界面上低过饱和度溶液中的晶体生长机制和动态过程进行计算机模拟,得到了晶体生长速率与溶液过饱和度之间的关系以及晶体生长的表面形态。对以二维成核为主要生长机制的动力学生长规律进行分析,发现了二维成核生长的生长死区以及单核生长转变为多核生长时的过饱和度临界值,讨论了热粗糙度、表面扩散、台阶平均高度以及表面尺寸对晶体平均生长速率的影响。
【Abstract】 An improved kinetic Monte Carlo method was adopted to simulate the dynamic process of crystal growth on the perfect and smooth surface in order to penetrate the microcosmic growth process of crystal,especially the crystal growth mechanism in the low supersaturated solution.As a result,the relationship between the crystal growth rate and the supersaturation of the solution was given,as well as the surface morphology of crystal growth.The kinetic law of crystal growth was analyzed,which indicated the two-dimensional nucleation being the main growth mechanism.The growth dead zone of two-dimensional nucleation growth and a critical point transforming the mononuclear growth into a multiple nucleation growth were discovered.Thermal roughness,surface diffusion,average height of the steps and the impact of the surface size on the average growth rate of the crystal are also discussed in this paper.
【Key words】 Monte Carlo simulation; growth mechanism; crystal surface morphology; crystal growth kinetics;
- 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2006年01期
- 【分类号】O781
- 【被引频次】32
- 【下载频次】1837