【摘要】 针对全CM O S结构制作恒压源方法中存在的功耗过大问题,提出了一种利用CM O S亚阈值特性的恒压源制作方案。该电路基于NM O S和PM O S处于饱和区工作时,两者的栅源电压随温度变化权重不同的原理,将其作相关运算,得到温度系数极低的恒压输出。基于M O S管亚阈值特性产生的电路模块中的偏置电流很小,导致功耗仅50μW。采用中芯国际0.18μm数模混合工艺制造了该电压源结构,测试结果显示,在21~110℃的温度范围内,电路的温度系数达到了2.5×1-0 5/℃。当电源电压达到1.4 V以上时,电路就可以正常工作,且其电源电压抑止比为-57 dB。更多还原

【Abstract】 The power consumption in CMOS voltage references is often excessive.This paper describes a voltage reference based on the CMOS sub-threshold characteristics that requires less power.By using the weighted difference between the gate-source voltages of an NMOS and a PMOS operating in the saturation region,the resulting output voltage has a very low temperature coefficient and a high power supply rejection ratio since the current supplied to the voltage source is based on the MOSFETs operating in the sub-threshold region.The voltage source was fabricated with the mixed-signal technology of（0.18） μm of semiconductor manufacturing international corporation（SMIC）.Measurements show that the temperature coefficient is only 2.5×10^<sup>-5/℃ between 21℃ to 110℃.The voltage source works well when V_<sub>DD is above 1.4 V.The power supply rejection ratio is-57 dB.更多还原