【摘要】 利用PECVD设备沉积非晶硅薄膜,然后放入特制的快速热退火炉中进行退火。利用X射线衍射仪(XRD)分析退火后的薄膜晶体结构,用电导率测试仪测试其暗电导率。研究结果表明,利用快速热退火晶化能够使非晶硅薄膜在较低温度下,在较短时间内发生晶化。更多还原

【Abstract】 The a-Si∶H thin films were deposited by PECVD and then were annealed in tailor-made RTA furnace.The microstructure and electric property of thin films were investigated by XRD and dark conductivity measurements.The results show that a-Si:H thin films had been annealed at lower temperature and shorter time by rapid thermal annealing(RTA).更多还原