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MOCVD方法在Ni/Si(111)模板上生长ZnO薄膜
MOCVD growth of ZnO film on Ni/Si(111) template
【摘要】 用常压金属有机化学气相外延方法在N i/S i(111)模板上生长ZnO薄膜,研究了ZnO低温缓冲层的厚度(50~300)对薄膜性能的影响。采用原子力显微镜,X射线衍射和光致发光光谱仪对这些样品进行分析。结果表明:缓冲层的厚度对ZnO外延薄膜的表面形貌、晶体结构及发光性能都有较大影响。在50~100低温缓冲层上生长的ZnO外延膜,晶粒尺寸大小均匀,发光和结晶性能良好。
【Abstract】 Ni/Si(111) templates were used as substrate to grow ZnO thin films by atmospheric pressure metalorganic chemical vapor deposition.The ZnO films were deposited on Ni/Si(111) template using different buffer layer thicknesses between 50 and 300.Atomic force microscopy was utilized to investigate the surface morphology.The crystallinity of ZnO films was investigated by the X-ray diffractometry.The optical properties of ZnO films were also investigated using room-temperature photoluminescence.It was found that the films deposited on the 50~100 thick ZnO buffer layer exhibit the good structural and optical properties with uniform grain sizes.
【Key words】 ZnO; MOCVD; Ni; Si; X-ray diffraction; photoluminescence;
- 【文献出处】 南昌大学学报(理科版) ,Journal of Nanchang University(Natural Science) , 编辑部邮箱 ,2006年01期
- 【分类号】O484.1
- 【被引频次】4
- 【下载频次】157