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MOCVD方法在Ni/Si(111)模板上生长ZnO薄膜

MOCVD growth of ZnO film on Ni/Si(111) template

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【作者】 方芳王立方文卿蒲勇郑畅达苏宏波江风益

【Author】 FANG Fang,WANG Li,FANG Wen-qing,PU Yong,ZHENG Chang-da,SU Hong-bo,JIANG Feng-yi(Education Ministry Engineering Research Center for Luminescence Materials and Devices,Nanchang University 330047,China)

【机构】 南昌大学教育部发光材料与器件工程研究中心南昌大学教育部发光材料与器件工程研究中心 江西南昌330047江西南昌330047

【摘要】 用常压金属有机化学气相外延方法在N i/S i(111)模板上生长ZnO薄膜,研究了ZnO低温缓冲层的厚度(50~300)对薄膜性能的影响。采用原子力显微镜,X射线衍射和光致发光光谱仪对这些样品进行分析。结果表明:缓冲层的厚度对ZnO外延薄膜的表面形貌、晶体结构及发光性能都有较大影响。在50~100低温缓冲层上生长的ZnO外延膜,晶粒尺寸大小均匀,发光和结晶性能良好。

【Abstract】 Ni/Si(111) templates were used as substrate to grow ZnO thin films by atmospheric pressure metalorganic chemical vapor deposition.The ZnO films were deposited on Ni/Si(111) template using different buffer layer thicknesses between 50 and 300.Atomic force microscopy was utilized to investigate the surface morphology.The crystallinity of ZnO films was investigated by the X-ray diffractometry.The optical properties of ZnO films were also investigated using room-temperature photoluminescence.It was found that the films deposited on the 50~100 thick ZnO buffer layer exhibit the good structural and optical properties with uniform grain sizes.

【关键词】 ZnOMOCVDNiSiX射线衍射光致发光
【Key words】 ZnOMOCVDNiSiX-ray diffractionphotoluminescence
【基金】 863纳米专项课题(2003AA302160);电子信息产业发展基金资助项目(2004125)
  • 【文献出处】 南昌大学学报(理科版) ,Journal of Nanchang University(Natural Science) , 编辑部邮箱 ,2006年01期
  • 【分类号】O484.1
  • 【被引频次】4
  • 【下载频次】157
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