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GaN/AlxGa1-xN量子点中类氢杂质的结合能

Binding energy of a hydrogenic-like impurity in GaN/AlxGa1-xN quantum dots

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【作者】 郑冬梅戴宪起

【Author】 ZHENG Dong-mei~1,DAI Xian-qi~2(1.Department of Physics and Electromechanical Engineering,Sanming College,Sanming,Fujian 365004,China;2.College of Physics and Information Engineering,,Henan Normal University,Xinxiang,Henan 453007,China)

【机构】 三明学院物理与机电工程系河南师范大学物理与信息工程学院 福建三明365004河南新乡453007

【摘要】 利用有效质量方法和变分原理,考虑内建电场(BEF)效应和量子点的三维约束效应,研究了纤锌矿结构的GaN/A lxGa1-xN柱形量子点中类氢杂质的结合能随量子点高度、A l含量和杂质位置的变化规律。结果表明:类氢杂质位于量子点中心时,杂质结合能随量子点高度的增加先增大后减小,存在最大值;随着A l含量的增加,杂质结合能增大。而杂质从量子点下界面沿Z轴上移至上界面时,杂质结合能先增大后减小,存在最大值。

【Abstract】 In this paper,we investigate the binding energy of a hydrogenic-like impurity as function of the height of QDs,Al content and the hydrogenic-like impurity position for an cylindrical wurtzite GaN/AlxGa1-xN QD within the framework of effective-mass approximation and a variational approach,including three-dimensional confinement in QDs and a strong built-in electric field effect.The numerical results show that when the hydrogenic-like impurity in the center of QDs,the binding energy first increases rapidly,reachs a maximum value,then slowly decreases with increasing the height of QDs.With increasing Al content, the binding energy of hydrogenic-like impurity increases.The dependence of binding energy on the impurity-center position is also considered.The binding energy of hydrogenic-like impurity firstly increases,and then decreases with moving the impurity position from the bottom of QD to the top.There is a maximum.

【基金】 国家自然科学基金(60476047)资助项目;河南省教育厅自然科学基金(200510476005)资助项目
  • 【文献出处】 贵州师范大学学报(自然科学版) ,Journal of Guizhou Normal University(Natural Sciences) , 编辑部邮箱 ,2006年01期
  • 【分类号】O471.1
  • 【被引频次】2
  • 【下载频次】63
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