【摘要】 通过对带隙基准电路零温漂点设置的开发,获取负温系数电压,实现负温系数电流获取新方法,发展令PMOSFET源栅电压与阈值电压的电源电压变化率相消,从而优化电源电压调整率的新概念,提出了一种CMOS基准电流源新方案。源于SMIC 0.35μm CMOS工艺模型。Ca-dence Hspice模拟验证结果表明,在-40~85℃温度范围内,温度系数为6.9 ppm/℃;3.0~3.6 V电压区间,电源电压调整率系10.6 ppm/V,低于目前文献报道的基准电流源相应指标。该新方案已经用于10位100 MSPS A/D转换器的研究设计,并可望应用于高精度模拟/混合信号系统的开发。更多还原

【Abstract】 A new CMOS current reference solution is presented by creating a new negative temperature coefficient current resulted from negative temperature coefficient voltage,which is generated in the bandgap circuit whose zero temperature coefficient point is specially configured,and proposing low line regulation mechanism,which is realized by compensating variations of source-to-gate voltage and threshold voltage versus supply voltages.Results from simulation in HSPICE based on SMIC’s 0.35 μm CMOS process model indicate that the current reference has a temperature coefficient of 6.9 ppm/℃ over the temperature range from-40 ℃ to 85 ℃ and a line regulation of 10.6 ppm/V for a supply voltage from 3.0 to 3.6 V,which are much lower than those reported in the literatures.The new solution has been implemented into a 10-bit 100 MSample/s A/D converter.更多还原