【摘要】 针对低功耗电路设计的需求,提出了一种低功耗约束下CMOS低噪声放大器的设计方法,并与传统的设计方法进行了对比。模拟结果表明,按照该方法基于0.18μm CMOS工艺设计的工作于1.58 GHz的低噪声放大器,在仅消耗1.9 mA电流的条件下,噪声指数小于1 dB。更多还原

【Abstract】 A design approach for low power CMOS low noise amplifier(LNA) is presented and it is compared with the traditional LNA design method.Simulation results indicate that,with the proposed approach,a 0.18 μm CMOS LNA at 1.58 GHz could provide sub-1dB noise figure with only 1.9 mA current consumption.更多还原