【摘要】 利用自洽迭代数值计算方法,对多发射极微波功率SiGe HBT芯片热电耦合特性进行了模拟和分析。结果表明,通过对晶体管发射极条长、条间距的调整,可以有效地改善芯片温度分布的不均匀性,提高晶体管的热稳定性和功率处理能力。更多还原

【Abstract】 Electrical-thermal couple effect of multi-emitter microwave power SiGe HBT is numerically studied(using) self-consistency iterative method.The calculated results indicate that the nonuniform distribution of junction temperature can be greatly improved by changing the length or the space width of emitter fingers.At the same time,the power-handling capability and the thermal stability of SiGe HBT can also be increased.更多还原