【摘要】 介绍了一种利用SiGe技术制作的低噪声SiGe微波单片放大电路(MMIC)。该电路以达林顿结构的形式级联,由两个异质结双极型晶体管(HBT)和4个电阻组成;HBT采用准自对准结构,其SiGe基区为非选择性外延。在1 GHz频率下,电路噪声为1.59 dB,功率增益为14.3 dB,输入驻波比为1.6,输出驻波比为2.0。更多还原

【Abstract】 A low noise microwave monolithic integrated circuit(MMIC)using Darlington configuration SiGe hetero-junction bipolar transistors(HBT’s)is presented. The circuit consists of two SiGe HBTs and four resistors.It is fabricated in a quasi-self-aligned process,with a non-selectively grown epitaxial SiGe base.The cutoff frequency of HBTs is 10.9 GHz and 9.2 GHz,respectively.The MMIC is measured to have a noise figure of 1.59 dB,a power gain of 14.3 dB,and an input and output VSWR of 1.6 and 2.0 at 1 GHz.更多还原