【摘要】 从器件I-V特性的角度,表征了射频功率异质结双极晶体管(HBT)的自加热效应。研究了器件热阻、工作电压、电流增益、发射结价带不连续性(ΔEV)等诸多因素对器件I-V特性的影响。进而研究了为补偿自加热效应所加镇流电阻对热稳定性的改善情况,给出了器件热稳定所需最小镇流电阻(REmin)与这些因素的关系。结果表明,HBT的REmin要小于同质结双极晶体管(BJT)的REmin,因此,射频功率HBT将有更大的输出功率、功率增益和功率附加效率(PAE)。更多还原

【Abstract】 I-V characteristics of the heterojunction bipolar transistor（HBT） are presented to account for self-heating effect of RF power HBT’s.Effects of various factors,such as thermal resistance,the voltage of collector-（emitter,） common emitter current gain and the valence-band discontinuity at emitter junction（ΔE_V）,on the I-V characteristics of the HBT are investigated.Furthermore,the improvement of thermal stability with ballast resistance used for compensating self-heating effect is studied.At the same time,the dependence of the minimum value of ballast resistance(R_Emin),above which there is unconditional thermal stability,on the factors mentioned above is given.Results show that R_Emin of the HBT is smaller than that of the BJT.Therefore,RF power HBT will provide higher output power,power gain,and power-added efficiency（PAE） in an amplifier block.更多还原