【摘要】 提出了一种提高高压垂直双扩散MOS场效应晶体管(VDMOSFET)的体二级管恢复速度的新方法.在这一方法中,肖特基接触集成于VDMOSFET中的每一单胞中.据此生产的样品的实验结果表明,对于500V/2A的VDMOSFET,反向恢复电荷减小了50%,体二极管的恢复因数增大了60%.更多还原

【Abstract】 A new approach to improve the high-voltage vertical double-diffused MOSFET(VDMOSFET) body-diode recovery speed is proposed.In this approach,a Schottky contact is integrated into every cell of the VDMOSFET.Experimental results from the fabricated samples show a 50% decrease in the reverse recovery charge and a 60% increase in the softness factor of the body diode in 500V/2A VDMOSFETs.更多还原