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单层片式晶界层半导体陶瓷材料研究进展
REVIEW ON THE DEVELOPMENT AND RESEARCH OF SINGLE LAYER INTERGRANULAR SEMICONDUCTOR CERAMIC
【摘要】 片式电子元件进入了全面发展的新时期,对元件微型化、轻型化、复合化、高频化和高性能化的要求越来越迫切,新型单层片式晶界层半导体陶瓷材料适时得到发展。本文对单层片式晶界层半导体陶瓷材料国内外研究、生产现状及发展进行了综述;对单层片式晶界层半导体陶瓷材料的制备工艺:介质陶瓷材料选择、半导体陶瓷基片材料的制备和半导体陶瓷基片材料的金属化进行了分析;展望了单层片式晶界层半导体陶瓷材料的应用和发展前景。
【Abstract】 Having been brought into a new period of comprehensive development,slice electronic elements are increasingly subject to the need of realization of micromation,weight lightening,integration,high frequency and high performance. The novel single layer intergranular semiconductor ceramic is right the time to be developed for this purpose.The present paper overviewed on the research,production and development of this kind of novel ceramic,especially the process of manufacture and metallization.Moreover,the paper forecasted the application and development prospect of the novel single layer intergranular semiconductor ceramic.
【Key words】 Intergranular semiconductor; Ceramic substrate; Metallization; Review;
- 【文献出处】 矿冶 ,Mining and Metallurgy , 编辑部邮箱 ,2006年01期
- 【分类号】TM283
- 【被引频次】7
- 【下载频次】459