【摘要】 采用一种电沉积法室温下制备纳米SnO2薄膜。经研究得到了电沉积SnO2薄膜的最佳工艺条件:电流密度、电沉积时间、主盐浓度、游离酸浓度分别为i=8 mA.cm-2,t=120 m in,c(SnC l2)=0.02 mol/L,c(HNO3)=0.03 mol/L。用X射线衍射、红外光谱和扫描电镜、透射电镜等对薄膜的物相和微观结构、表面形貌等进行了研究。结果表明,室温下干燥得到的薄膜由SnO2.xH2O组成,但经过400℃热处理后,逐渐转变成结晶较为完整的四方结构SnO2薄膜,薄膜的表面较为平整、呈多孔状,薄膜粒径大小为8~20 nm。更多还原

【Abstract】 A process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed.The optimal preparation technology to obtain SnO₂ thin films was proposed as current density i=8 mA·cm²,time of deposition t=120 min,c（SnCl₂）=0.02 mol/L and c（HNO₃）=0.03 mol/L.The phase identification,microstructure and morphology of the thin films were investigated by XRD,FTIR,SEM and TEM.The as-deposited thin film composed of SnO₂·xH₂O was formed on drying at room temperature.Nanocrystalline SnO₂ thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and uniform porous surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h.更多还原