【摘要】 用射频溅射法在单晶硅衬底上制备了FeZrBNi/Ag/ReZrBNi三层膜,对制备态样品进行了磁阻抗测量．结果表明,样品纵向和横向的最大磁阻抗比分别为18%和31%,取得最大阻抗比的频率分别为7和8MHz；在此频率下,样品的纵向和横向相对磁导率比分别达到153%和5117%．这表明掺Ni的FeZrB三层膜在制备态已具备优异的巨磁阻抗效应和软磁性能．同时还分析了薄膜样品的电阻、电抗分量和有效磁导率随频率的变化关系．更多还原

【Abstract】 Giant magneto-impedance (GMI) effects of FeZrBNi/Ag/FeZrBNi sandwiched films prepared by radio frequency sputtering on the substrate of single crystal Si have been measured.The maximum GMI ratios are 18% and 31% in longitudinal and transverse fields at 7 MHz and 8 MHz, respectively.Corresponding,the maximum effective susceptibility ratios are 153% (at 7 MHz) and 5117% (at 8 MHz) for longitudinal and transverse cases,respectively,indicating that the as-deposited FeZrBNi/Ag/FeZrBNi films have good soft magnetic properties and GMI effect.更多还原