【摘要】 通过在金刚石对顶砧上集成以氧化铝薄膜为绝缘层的微型测量电路,原位测量了ZnS电阻率随压力的变化,证实ZnS的压致相变为半导体到半导体相变,而非金属化相变,并发现ZnS相变的可逆性与相变的迟滞现象.更多还原

【Abstract】 The resistance of ZnS was in-situ measured under high pressure by using integrated microcircuit on DAC with an alumina film as a insulating layer.It has been confirmed that the phase transition of ZnS is a semiconductor to semiconductor phase transition,not a semiconductor to metallic phase transition.The reversibility of the phase transition of ZnS is observed.In addition,the hysteresis of the phase transition of ZnS was found.更多还原