【摘要】 用FeSi2合金靶作为靶材,采用准分子激光沉积法在Si(111)单晶基片上制备了单相的-βFeSi2薄膜,并将飞秒脉冲激光沉积法(PLD)引入到-βFeSi2薄膜的制备工艺中;用X射线衍射仪(XRD),场扫描电镜(FSEM),能谱仪(EDS),紫外可见光光谱仪研究了薄膜的结构、组分、表面形貌和光学性能。基片温度为500℃,采用KrF准分子脉冲激光沉积法可获得单相的-βFeSi2薄膜。衬底温度为550℃时,-βFeSi2出现迷津状薄层。采用飞秒脉冲激光法-βFeSi2薄膜的合成温度比准分子脉冲激光沉积法制备温度低50~100℃;薄膜的晶粒分布均匀连续,没有微米级的微滴;飞秒脉冲激光沉积效率比准分子激光的高1000倍以上,是一种快速高效的-βFeSi2薄膜沉积技术。更多还原

【Abstract】 The even single phase βFeSi₂ thin films were prepared by femtosecond pulsed laser deposition（PLD） on Si（111） wafers at different temperature using an FeSi₂ alloy target,and excimer（nanosecond） PLD was introduced to prepared β-FeSi₂ thin films also.X-ray diffraction（XRD）,field scanning electron microscopy（FSEM）, energy disperse spectroscopy（EDS）,ultraviolet-visible spectra photometer were used to characterize the structure,composition and morphology of the films.The micro drop appeared in the both samples prepared by nanosecond PLD at（500 ℃） and（550 ℃,） the maze surface appeared in the surface of the sample prepared at（550 ℃.） The single phase β-FeSi₂ thin films were gained by femtosecond PLD below（400 ℃,） but the proper temperature of nanosecond PLD was（500 ℃;） The β-FeSi₂ thin films prepared by femtosecond PLD were free of micro drop,the deposition efficiency at unit average laser power in the process of depositing β-FeSi₂ thin films by the femtosecond PLD system was 1000 times over that of the nanosecond PLD system.更多还原