【摘要】 在铁薄膜的催石墨化作用下研究了用氢等离子体刻蚀由微波等离子体化学气相沉积(MPCVD)制备的多晶金刚石厚膜的表面。其工艺为:自支撑的金刚石厚膜浸入饱和的三氯化铁水溶液中,然后平放在大气环境中干燥,将处理过后的金刚石膜放入MPCVD装置中,先用氢等离子体将氯化铁还原成铁,然后在800℃左右的温度下,利用铁对金刚石的催石墨化作用及氢等离子体的刻蚀作用将其表面刻蚀。刻蚀完后的金刚石用酸清洗,在丙酮溶液中漂洗,然后用SEM观察刻蚀效果,用Ram an光谱对表面碳的结构进行了表征。最后用机械研磨法对金刚石样品表面进行研磨,并对研磨结果进行对比。实验结果表明,这种方法能够有选择地快速刻蚀金刚石膜的表面,破坏表面晶粒的完整度,降低表面耐磨性,从而提高对粗糙金刚石膜表面研磨的效率。更多还原

【Abstract】 Polycrystalline diamond thick films,deposited by microwave-plasma-enhanced chemical vapor deposition(MPCVD),were etched in hydrogen plasma under the graphitization effect of iron thin film.For this process,the free-standing diamond thick films were dipped in a saturated iron chloride solution and dried in atmospheric ambient.The pretreated diamond were reset in the MPCVD system.The diamond films were heated by using hydrogen plasma.Under the reduction effect of hydrogen plasma,iron thin film was formed on the surface of the thick diamond film.Carbon diffusion process was carried through at 800℃ under the graphitization effect of iron thin film.After etching the free-standing diamond film surface,the sample was cleaned with acid and rinsed in acetone.The cleaned surface was observed with scanning electron microscopy under a secondary electron mode.Carbon phases were investigated with Raman spectroscopy.Mechanical lapping experiments were conducted to compare the effect of hydrogen plasma etching combined with carbon diffusion process.The results indicated that this technique can selectively and efficiently etch the CVD diamond films.更多还原