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Si基复合衬底碲镉汞液相外延技术的研究
The Study of Hg1-xCdxTe LPE on Silicon Composite Substrates
【摘要】 文章报道了采用Si基复合衬底,利用液相外延方法成功进行中波碲镉汞薄膜生长的情况,并且采用X光双晶衍射、X光形貌、红外付立叶光谱仪等手段对碲镉汞薄膜进行了表征。Si基复合衬底碲镉汞外延膜晶体结构为单晶,并且它的双晶衍射半峰值接近国外同类产品的先进水平。
【Abstract】 In the article the good result of LPE MW(Hg1-xCdxTe) on silicon composite substrates is presented,The Hg1-xCdxTe epilayer was characterized with X-ray diffraction,X-ray topography and FTIR. The LPE MW(Hg1-xCdxTe) on silicon composite substrate is single crystal,and its FWHM is as low as that of the best result published before.
- 【文献出处】 激光与红外 ,Laser & Infrared , 编辑部邮箱 ,2006年11期
- 【分类号】TN304.05
- 【被引频次】1
- 【下载频次】105